Recently, the preparation of high-quality RuO thin films on silicon wafers has become of interest for electrode structures for developing new ferroelectric memories based on lead zirconate titanate (PZT). Such films of RuO are often contaminated with chloride impurities and show poor adhesion.
RU LATTICE ENERGY SERIES
ON: DE84002937 Resource Type: Technical Report Resource Relation: Related Information: Nuclear Science Series Radiochemistry of the Elements Country of Publication: United States Language: English Subject: 38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY RUTHENIUM RADIOCHEMISTRY CHEMICAL ANALYSIS CHROMATOGRAPHY CORROSION RESISTANCE PHYSICAL PROPERTIES PRECIPITATION RUTHENIUM 103 RUTHENIUM 106 RUTHENIUM ALLOYS RUTHENIUM COMPOUNDS RUTHENIUM OXIDES SEPARATION PROCESSES SOLVENT EXTRACTION SPECTROSCOPY ALLOYS BETA DECAY RADIOISOTOPES BETA-MINUS DECAY RADIOISOTOPES CHALCOGENIDES CHEMISTRY DAYS LIVING RADIOISOTOPES ELEMENTS EVEN-EVEN NUCLEI EVEN-ODD NUCLEI EXTRACTION INTERMEDIATE MASS NUCLEI ISOTOPES METALS NUCLEI OXIDES OXYGEN COMPOUNDS PLATINUM METAL ALLOYS PLATINUM METALS RADIOISOTOPES REFRACTORY METAL COMPOUNDS RUTHENIUM ISOTOPES TRANSITION ELEMENT COMPOUNDS TRANSITION ELEMENTS YEARS LIVING RADIOISOTOPES 400700* - Radiochemistry & Nuclear Chemistry 400702 - Radiochemistry & Nuclear Chemistry- Properties of Radioactive Materialsįilms of ruthenium dioxide are important for several electronic and electrochemical applications, and are usually obtained by solution methods from ruthenium-(III) chloride or other ruthenium compounds.
Rockwell Hanford Operations Sponsoring Org.: DOE/ER OSTI Identifier: 6278899 Report Number(s): NAS-NS-3029-Rev. Authors: Schulz, W W Metcalf, S G Barney, G S Publication Date: Research Org.: Rockwell International Corp., Richland, WA (United States).
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